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RF2129
2
Typical Applications
* 2.5GHz ISM Band Applications * PCS Communication Systems * Wireless LAN Systems * Commercial and Consumer Systems * Portable Battery Powered Equipment * Broadband Spread Spectrum Systems
3V, 2.5GHZ LINEAR POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum transmitters. The device is packaged in an 8-lead plastic package with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.
.157 .150 1 .196 .189 .050 .019 .014 .010 .004 EXPOSED HEATSINK
.123 .107
8MAX 0MIN
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
ro du ct
u
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 3.3V Power Supply * +26dBm Saturated Output Power * 27dB Small Signal Gain * High Power Added Efficiency * Power Down Mode * 1800MHz to 2500MHz Frequency Range
VCC2 1 VCC2 2 NC 3
U pg r
S ee
ad ed
BIAS CIRCUITS
8 VCC1 7 RF OUT 6 RF OUT 5 PC
P
RF IN 4
Ordering Information
RF2129 RF2129 PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board
PACKAGE BASE GND
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
R F2 18
.035 .016
.010 .007
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Package Style: PSOP-8
9
.244 .230
.061 .055
.087 .071
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B4 000323
2-93
RF2129
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity
Rating
-0.5 to +6.0 -0.5 to 3.3 350 +12 -40 to +85 -40 to +150 JEDEC Level 3
Unit
VDC V mA dBm C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum Saturated Output Power Efficiency at max output power Small Signal Gain Reverse Isolation Second Harmonic IM3 IM5 IM7 Isolation Input Impedance Input VSWR Noise Figure
Specification Min. Typ. Max.
1800 to 2500 +26 42 26.5 30 30 -50 -30 -35 -48 -30 50 2:1 7 -23 -30 -35
Unit
Condition
T=25 C, VCC =3.3V, VPC =3.0V, PIN =0dBm, Freq=2450MHz
+24.5
+27
MHz dBm % dB dB dB dBc
PIN =+6dBm
24.5
-20
Power Down
Power Control "ON" Power Control "OFF" PC Input Impedance 5 2.7
ro du ct
3.0 0.5 320 175 150 10
dBm dB V
In "ON" state In "OFF" state Including second harmonic trap, see application circuit POUT =+17dBm in each tone POUT =+17dBm in each tone POUT =+17dBm in each tone In "OFF" state, PIN =0dBm
P
0
ad ed
Power Supply
Operating Voltage Current Consumption
U pg r
180 95 50
3.0 to 5.0 260 150 100 <1
Current Consumption
2-94
S ee
R F2 18
V
Voltage supplied to control input; device is "ON" Voltage supplied to control input; device is "OFF"
k
V mA mA mA A
Power Down "ON", at max output power Power Down "ON", two-tone test +20dBm average output power Idle current Power Down "OFF"
9
Rev B4 000323
RF2129
Pin 1 Function VCC2 Description
Bias supply pin for the first stage. A small tuning capacitor is required to set the desired frequency response. External low frequency bypass capacitors should be connected as shown in the application schematic if no other low frequency decoupling is nearby.
Interface Schematic
VCC2
RF IN
BIAS
2
POWER AMPLIFIERS
2 3 4 5
VCC2 NC RF IN PC
Connected internally to pin 1. Not internally connected. RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. Power control pin. For maximum power this pin should be 3.3V. A higher voltage is not recommended. For less output power and reduced idle current this voltage may be reduced.
See pin 1.
See pin 1.
VCC1 500 PC To RF Stages RF OUT
6
RF OUT
7 8 Pkg Base
RF OUT VCC1 GND
Same as pin 6.
R F2 18
RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents.
Rev B4 000323
S ee
U pg r
ad ed
P
ro du ct
Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
9
See pin 6. See pin 5. See pin 1 and 6.
2-95
RF2129
Application Schematic 2.45GHz Operation
VCC 1 nF 1 nF 100 pF 22 pF 3.3 pF 5 1 2 3 33 pF RF IN 4 PACKAGE BASE 5 BIAS CIRCUITS 8 8.2 nH 7 33 pF 6 1.1 pF RF OUT 10 pF
2
POWER AMPLIFIERS
3.3 F
36 pF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
ro du ct
R F2 18
C6 3.3 F C12 1 nF C7 3.3 F C13 22 pF C8 10 pF 8 7 6 5 C4 1.1 pF C3 33 pF L12 8.2 nH RF OUT Power Control
VCC C11 3.3 F C10 1 nF C9 36 pF
50 L=0.250"
ad ed
C1 3.3 pF
R1 5
P
1 2 3 4
BIAS CIRCUITS
RF IN
S ee
U pg r
C2 33 pF
50
PACKAGE BASE
2-96
9
Rev B4 000323
Power Control
RF2129
Evaluation Board Layout 2" x 2"
2
POWER AMPLIFIERS
Rev B4 000323
S ee
U pg r
ad ed
P
ro du ct
R F2 18
9
2-97
2
POWER AMPLIFIERS
2-98
RF2129
S ee U pg r ad ed P ro du ct R F2 18 9
Rev B4 000323

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